- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,293
有现货
|
Infineon Technologies | MOSFET N-CH 100V 10.3A TO-263 | SIPMOS® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 50W (Tc) | N-Channel | - | 100V | 10.3A (Tc) | 154 mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | 444pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,477
有现货
|
Infineon Technologies | MOSFET N-CH 600V 9A TO-263 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 83W (Tc) | N-Channel | - | 600V | 9A (Tc) | 385 mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | 10V | ±20V | ||
|
|
获得报价 |
3,718
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 80V 24A SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 48W (Tc) | N-Channel | - | 80V | 24A (Tc) | 12.3 mOhm @ 12A, 10V | 4V @ 300µA | 22nC @ 10V | 1900pF @ 40V | 10V | ±20V | ||
|
|
获得报价 |
1,012
有现货
|
STMicroelectronics | MOSFET N-CH 650V 11A D2PAK | MDmesh™ V | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 85W (Tc) | N-Channel | - | 650V | 11A (Tc) | 340 mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | 810pF @ 100V | 10V | ±25V |