- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
27 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
1,830
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,875
有现货
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,032
有现货
|
ON Semiconductor | MOSFET P-CH 200V 3.1A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 2.5W (Ta), 30W (Tc) | P-Channel | - | 200V | 3.1A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 19nC @ 10V | 540pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,212
有现货
|
ON Semiconductor | MOSFET P-CH 60V 9.7A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 49W (Tc) | P-Channel | - | 60V | 9.7A (Tc) | 280 mOhm @ 4.9A, 10V | 4V @ 250µA | 19nC @ 10V | 600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
739
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,399
有现货
|
Infineon Technologies | MOSFET P-CH 55V 9.5A TO-220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 29W (Tc) | P-Channel | - | 55V | 9.5A (Tc) | 175 mOhm @ 5.4A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,736
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
;;3.jpg)
|
|
获得报价 |
2,165
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
897
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.5A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 37W (Tc) | P-Channel | - | 60V | 8.5A (Tc) | 280 mOhm @ 5.1A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,699
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,609
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
891
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.8A I-PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
,%20SC-63.jpg)
|
|
获得报价 |
2,522
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,793
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,912
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,714
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 11A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,595
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
968
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 11A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,989
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 37W (Tc) | P-Channel | - | 60V | 8.5A (Tc) | 280 mOhm @ 5.1A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,202
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 11A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,533
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,686
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 11A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,493
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
744
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,790
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,486
有现货
|
Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | P-Channel | - | 60V | 1.6A (Ta) | 280 mOhm @ 960mA, 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,963
有现货
|
Infineon Technologies | MOSFET P-CH 55V 12A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 45W (Tc) | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |
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