- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- 输入电容(Ciss)(最大)@Vds :
8 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,036
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 550V 12A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 550V | 12A (Ta) | 570 mOhm @ 6A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
|
获得报价 |
896
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 500V 12.5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 500V | 12.5A (Ta) | 470 mOhm @ 6.3A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
|
获得报价 |
2,804
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 11A (Ta) | 650 mOhm @ 5.5A, 10V | 4V @ 1mA | 28nC @ 10V | 1550pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,767
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 5A TO-220SIS | π-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 900V | 5A (Ta) | 2.5 Ohm @ 3A, 10V | 4V @ 1mA | 28nC @ 10V | 1150pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,573
有现货
|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,871
有现货
|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,598
有现货
|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,276
有现货
|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V |