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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
25 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IRF7526D1PBF
获得报价
RFQ
2,592
有现货
Infineon Technologies MOSFET P-CH 30V 2A MICRO8 FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 1.25W (Ta) P-Channel Schottky Diode (Isolated) 30V 2A (Ta) 200 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 4.5V, 10V ±20V
IRL3103D1SPBF
获得报价
RFQ
969
有现货
Infineon Technologies MOSFET N-CH 30V 64A D2PAK-5 FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRF7807VD2PBF
获得报价
RFQ
2,204
有现货
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V
IRF7807D2PBF
获得报价
RFQ
2,267
有现货
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V
IRF7807D1PBF
获得报价
RFQ
2,944
有现货
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V
IRF7353D2PBF
获得报价
RFQ
3,446
有现货
Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) N-Channel Schottky Diode (Isolated) 30V 6.5A (Ta) 29 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V
IRF7353D1PBF
获得报价
RFQ
2,522
有现货
Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) N-Channel Schottky Diode (Isolated) 30V 6.5A (Ta) 32 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V
AUXHMF7321D2
获得报价
RFQ
1,662
有现货
Infineon Technologies MOSFET P-CH 30V 4.7A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 30V 4.7A (Ta) 62 mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 4.5V, 10V ±20V
IRF7353D2
获得报价
RFQ
1,051
有现货
Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) N-Channel Schottky Diode (Isolated) 30V 6.5A (Ta) 29 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V
IRF7326D2PBF
获得报价
RFQ
1,376
有现货
Infineon Technologies MOSFET P-CH 30V 3.6A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 30V 3.6A (Ta) 100 mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 4.5V, 10V ±20V
IRL3103D2PBF
获得报价
RFQ
3,142
有现货
Infineon Technologies MOSFET N-CH 30V 54A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 70W (Tc) N-Channel - 30V 54A (Tc) 14 mOhm @ 32A, 10V 1V @ 250µA 44nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V
IRF7526D1
获得报价
RFQ
1,851
有现货
Infineon Technologies MOSFET P-CH 30V 2A MICRO8 FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 1.25W (Ta) P-Channel Schottky Diode (Isolated) 30V 2A (Ta) 200 mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V 180pF @ 25V 4.5V, 10V ±20V
IRF7523D1
获得报价
RFQ
3,982
有现货
Infineon Technologies MOSFET N-CH 30V 2.7A MICRO-8 FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Micro8™ 1.25W (Ta) N-Channel Schottky Diode (Isolated) 30V 2.7A (Ta) 130 mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 4.5V, 10V ±20V
IRL3103D2
获得报价
RFQ
2,335
有现货
Infineon Technologies MOSFET N-CH 30V 54A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220AB 2W (Ta), 70W (Tc) N-Channel - 30V 54A (Tc) 14 mOhm @ 32A, 10V 1V @ 250µA 44nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V
IRF7421D1
获得报价
RFQ
3,212
有现货
Infineon Technologies MOSFET N-CH 30V 5.8A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) N-Channel Schottky Diode (Isolated) 30V 5.8A (Ta) 35 mOhm @ 4.1A, 10V 1V @ 250µA 27nC @ 10V 510pF @ 25V 4.5V, 10V ±20V
IRL3103D1S
获得报价
RFQ
3,651
有现货
Infineon Technologies MOSFET N-CH 30V 64A D2PAK FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.1W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRL3103D1
获得报价
RFQ
3,261
有现货
Infineon Technologies MOSFET N-CH 30V 64A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRL3103D1PBF
获得报价
RFQ
2,548
有现货
Infineon Technologies MOSFET N-CH 30V 64A TO-220AB FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 2W (Ta), 89W (Tc) N-Channel - 30V 64A (Tc) 14 mOhm @ 34A, 10V 1V @ 250µA 43nC @ 4.5V 1900pF @ 25V 4.5V, 10V ±16V
IRF7342D2PBF
获得报价
RFQ
874
有现货
Infineon Technologies MOSFET P-CH 55V 3.4A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 55V 3.4A (Ta) 105 mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 4.5V, 10V ±20V
IRF7326D2
获得报价
RFQ
2,174
有现货
Infineon Technologies MOSFET P-CH 30V 3.6A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 30V 3.6A (Ta) 100 mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 4.5V, 10V ±20V
IRF7807VD2
获得报价
RFQ
2,578
有现货
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 14nC @ 4.5V - 4.5V ±20V
IRF7807D2
获得报价
RFQ
3,062
有现货
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V
IRF7807D1
获得报价
RFQ
1,706
有现货
Infineon Technologies MOSFET N-CH 30V 8.3A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) - Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel Schottky Diode (Isolated) 30V 8.3A (Ta) 25 mOhm @ 7A, 4.5V 1V @ 250µA 17nC @ 5V - 4.5V ±12V
IRF7353D1
获得报价
RFQ
3,750
有现货
Infineon Technologies MOSFET N-CH 30V 6.5A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) N-Channel Schottky Diode (Isolated) 30V 6.5A (Ta) 32 mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 4.5V, 10V ±20V
IRF7321D2
获得报价
RFQ
3,513
有现货
Infineon Technologies MOSFET P-CH 30V 4.7A 8-SOIC FETKY™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2W (Ta) P-Channel Schottky Diode (Isolated) 30V 4.7A (Ta) 62 mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 4.5V, 10V ±20V
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