- 系列 :
- 供应商设备包 :
- 功耗（最大） :
- FET型 :
- FET特性 :
- Rds开启（最大）@Id，Vgs :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
16 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,120
有现货
|
NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | - | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | ||
|
|
|
获得报价 |
1,251
有现货
|
NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | - | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | ||
|
|
|
获得报价 |
3,239
有现货
|
NXP USA Inc. | MOSFET N-CH 20V 5.8A SOT23 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | - | 20V | 5.8A (Ta) | 18 mOhm @ 5.8A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | 1.8V, 4.5V | ±8V | ||
|
|
获得报价 |
3,489
有现货
|
Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,351
有现货
|
Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,988
有现货
|
Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,699
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,323
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,212
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,567
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,208
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,933
有现货
|
Infineon Technologies | MOSFET N-CH 30V 5.8A 8-SOIC | FETKY™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2W (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 5.8A (Ta) | 35 mOhm @ 4.1A, 10V | 1V @ 250µA | 27nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,111
有现货
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,252
有现货
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
812
有现货
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,336
有现货
|
Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V |
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