- 供应商设备包 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,801
有现货
|
Vishay Siliconix | MOSFET N-CH 20V 12A 8-SOIC | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | N-Channel | - | 20V | 12A (Tc) | 13.8 mOhm @ 11A, 10V | 2.5V @ 250µA | 33nC @ 10V | 1280pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
796
有现货
|
Vishay Siliconix | MOSFET N-CH 20V 12A 8-SOIC | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta), 5W (Tc) | N-Channel | - | 20V | 12A (Tc) | 13.8 mOhm @ 11A, 10V | 2.5V @ 250µA | 33nC @ 10V | 1280pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,663
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,137
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,149
有现货
|
Infineon Technologies | HEX/MOS N-CH 30V 11A 8-SOIC | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,466
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 52A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 100V | 22A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,633
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | ||
|
|
|
获得报价 |
3,786
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,215
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,531
有现货
|
Infineon Technologies | MOSFET N-CH 30V 11A 8-SOIC | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11A (Ta) | 13.8 mOhm @ 11A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | 4.5V, 10V | ±20V |
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