- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 驱动电压(最大Rds接通,最小Rds接通) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 安装类型 | 包装/箱 | 供应商设备包 | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 驱动电压(最大Rds接通,最小Rds接通) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,740
有现货
|
Infineon Technologies | MOSFET N-CH 40V 2A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 40V | 2A (Tj) | 50 mOhm @ 2A, 10V | 4V @ 200µA | 10V | ||
|
|
获得报价 |
1,521
有现货
|
Infineon Technologies | MOSFET N-CH 30V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 30V | 1A (Tj) | 50 mOhm @ 2A, 10V | 2.2V @ 250µA | 4.5V, 10V | ||
|
|
获得报价 |
3,363
有现货
|
Infineon Technologies | MOSFET N-CH 30V 2A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 30V | 2A (Tj) | 50 mOhm @ 2A, 10V | 2.2V @ 250µA | 10V | ||
|
|
获得报价 |
747
有现货
|
Infineon Technologies | MOSFET N-CH 30V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 30V | 1A (Tj) | 50 mOhm @ 2A, 10V | 2.2V @ 250µA | 10V | ||
|
|
获得报价 |
3,002
有现货
|
Infineon Technologies | MOSFET N-CH 30V 1A SAWN ON FOIL | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 30V | 1A (Tj) | 50 mOhm @ 2A, 10V | 2.2V @ 250µA | 4.5V, 10V | ||
|
|
获得报价 |
3,915
有现货
|
Infineon Technologies | MOSFET N-CH 30V 2A SAWN ON FOIL | OptiMOS™ 3 | Active | - | MOSFET (Metal Oxide) | Surface Mount | Die | Sawn on foil | N-Channel | 30V | - | 50 mOhm @ 2A, 10V | 2.2V @ 250µA | 10V |