- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
23 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,497
有现货
|
Renesas Electronics America | MOSFET N-CH 100V 40A MP-25ZP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerLDFN | 8-HSON | 1W (Ta), 120W (Tc) | N-Channel | - | 100V | 40A (Tc) | 25 mOhm @ 20A, 10V | 2.5V @ 250µA | 71nC @ 10V | 3150pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,355
有现货
|
Renesas Electronics America | MOSFET N-CH 100V 40A TO-263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | 1.8W (Ta), 120W (Tc) | N-Channel | - | 100V | 40A (Tc) | 27 mOhm @ 20A, 10V | 2.5V @ 250µA | 71nC @ 10V | 3150pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,218
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,294
有现货
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
916
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
861
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,005
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,976
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,803
有现货
|
Diodes Incorporated | MOSFET N-CH 100V SO-8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.4W (Ta) | N-Channel | - | 100V | 11.5A (Ta), 29.5A (Tc) | 9.5 mOhm @ 13A, 10V | 2.8V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,979
有现货
|
Diodes Incorporated | MOSFET N-CH 100V SO-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.4W (Ta) | N-Channel | - | 100V | 11.5A (Ta), 29.5A (Tc) | 9.5 mOhm @ 13A, 10V | 2.8V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,897
有现货
|
Diodes Incorporated | MOSFET N-CH 100V SO-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.4W (Ta) | N-Channel | - | 100V | 11.5A (Ta), 29.5A (Tc) | 9.5 mOhm @ 13A, 10V | 2.8V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,186
有现货
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,111
有现货
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,082
有现货
|
Infineon Technologies | MOSFET N-CH 100V 32A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 100V | 32A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,708
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,090
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,639
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,454
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,466
有现货
|
Diodes Incorporated | MOSFET N-CH 100V 9.4A | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.2W (Ta), 139W (Tc) | N-Channel | - | 100V | 9.4A (Ta), 98A (Tc) | 9.5 mOhm @ 13A, 10V | 3.5V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,171
有现货
|
Diodes Incorporated | MOSFET N-CH 100V 9.4A | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.2W (Ta), 139W (Tc) | N-Channel | - | 100V | 9.4A (Ta), 98A (Tc) | 9.5 mOhm @ 13A, 10V | 3.5V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,757
有现货
|
Diodes Incorporated | MOSFET N-CH 100V 9.4A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.2W (Ta), 139W (Tc) | N-Channel | - | 100V | 9.4A (Ta), 98A (Tc) | 9.5 mOhm @ 13A, 10V | 3.5V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,136
有现货
|
Diodes Incorporated | MOSFET N-CH 100V TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 2W (Ta), 139W (Tc) | N-Channel | - | 100V | 98A (Tc) | 9.5 mOhm @ 13A, 10V | 3V @ 250µA | 71nC @ 10V | 3000pF @ 50V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,330
有现货
|
Infineon Technologies | MOSFET N-CH 100V 33A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 100V | 33A (Tc) | 44 mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | 10V | ±20V |
粤ICP备2022113175号-1