- 零件状态 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
812
有现货
|
Infineon Technologies | MOSFET N-CH 100V 18A | FASTIRFET™, HEXFET® | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PQFN (5x6) | 3.8W (Ta), 132W (Tc) | N-Channel | - | 100V | 18A (Ta), 105A (Tc) | 6 mOhm @ 50A, 10V | 3.6V @ 150µA | 50nC @ 10V | 2116pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,510
有现货
|
Infineon Technologies | MOSFET N-CH 100V 18A | FASTIRFET™, HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.8W (Ta), 132W (Tc) | N-Channel | - | 100V | 18A (Ta), 105A (Tc) | 6 mOhm @ 50A, 10V | 3.9V @ 150µA | 50nC @ 10V | 2116pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
1,508
有现货
|
Infineon Technologies | MOSFET N-CH 100V 18A | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.8W (Ta), 132W (Tc) | N-Channel | - | 100V | 18A (Ta), 105A (Tc) | 6 mOhm @ 50A, 10V | 3.9V @ 150µA | 50nC @ 10V | 2116pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
3,928
有现货
|
Infineon Technologies | MOSFET N-CH 100V 18A | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.8W (Ta), 132W (Tc) | N-Channel | - | 100V | 18A (Ta), 105A (Tc) | 6 mOhm @ 50A, 10V | 3.9V @ 150µA | 50nC @ 10V | 2116pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
737
有现货
|
IXYS | MOSFET N-CH 100V 180A TO-263AA | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | 10500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,727
有现货
|
IXYS | MOSFET N-CH 100V 180A TO-220 | GigaMOS™, HiPerFET™, TrenchT2™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 480W (Tc) | N-Channel | - | 100V | 180A (Tc) | 6 mOhm @ 50A, 10V | 4V @ 250µA | 185nC @ 10V | 10500pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,321
有现货
|
Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 125W (Tc) | N-Channel | - | 100V | 14.9A (Ta), 90A (Tc) | 6 mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4900pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
3,854
有现货
|
Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 125W (Tc) | N-Channel | - | 100V | 14.9A (Ta), 90A (Tc) | 6 mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4900pF @ 50V | 6V, 10V | ±20V | ||
|
|
获得报价 |
968
有现货
|
Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 125W (Tc) | N-Channel | - | 100V | 14.9A (Ta), 90A (Tc) | 6 mOhm @ 50A, 10V | 3.5V @ 90µA | 68nC @ 10V | 4900pF @ 50V | 6V, 10V | ±20V |