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10 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IRFP4332-203PBF
获得报价
RFQ
3,818
有现货
Infineon Technologies MOSFET N-CH 250V 57A TO247AC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 360W (Tc) N-Channel - 250V 57A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFSL4229PBF
获得报价
RFQ
2,028
有现货
Infineon Technologies MOSFET N-CH 250V 45A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFB4332PBF
单位
$4.13
获得报价
RFQ
2,247
有现货
Infineon Technologies MOSFET N-CH 250V 60A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 390W (Tc) N-Channel - 250V 60A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFB4229PBF
单位
$3.82
获得报价
RFQ
2,963
有现货
Infineon Technologies MOSFET N-CH 250V 46A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 330W (Tc) N-Channel - 250V 46A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229PBF
单位
$4.56
获得报价
RFQ
3,795
有现货
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFP4332PBF
单位
$4.59
获得报价
RFQ
981
有现货
Infineon Technologies MOSFET N-CH 250V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 360W (Tc) N-Channel - 250V 57A (Tc) 33 mOhm @ 35A, 10V 5V @ 250µA 150nC @ 10V 5860pF @ 25V 10V ±30V
IRFP4229PBF
单位
$4.23
获得报价
RFQ
1,039
有现货
Infineon Technologies MOSFET N-CH 250V 44A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 310W (Tc) N-Channel - 250V 44A (Tc) 46 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
获得报价
RFQ
3,262
有现货
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
单位
$4.47
获得报价
RFQ
3,608
有现货
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
IRFS4229TRLPBF
单位
$2.32
获得报价
RFQ
3,034
有现货
Infineon Technologies MOSFET N-CH 250V 45A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 330W (Tc) N-Channel - 250V 45A (Tc) 48 mOhm @ 26A, 10V 5V @ 250µA 110nC @ 10V 4560pF @ 25V 10V ±30V
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