- 零件状态 :
- 包装材料 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
707
有现货
|
ON Semiconductor | MOSFET P-CH 200V 6A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 75W (Tc) | P-Channel | - | 200V | 6A (Tc) | 1 Ohm @ 3A, 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,610
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO-263 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,467
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.5A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,341
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,289
有现货
|
ON Semiconductor | MOSFET P-CH 200V 4.8A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 75W (Tc) | P-Channel | - | 200V | 4.8A (Tc) | 1.4 Ohm @ 2.4A, 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,467
有现货
|
Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,111
有现货
|
STMicroelectronics | MOSFET N-CH 200V 9A TO-220 | MESH OVERLAY™ II | Active | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 75W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 250µA | 45nC @ 10V | 700pF @ 25V | 10V | ±20V |