- 零件状态 :
- 供应商设备包 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
13 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
3,614
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,909
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
987
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,384
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,806
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,871
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,366
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,775
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,941
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,016
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,112
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,552
有现货
|
Infineon Technologies | MOSFET N-CH 40V 130A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 40V | 130A (Tc) | 6.5 mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | 5330pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,574
有现货
|
Infineon Technologies | MOSFET NCH 40V 130A IPAK | Automotive, AEC-Q101, HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 140W (Tc) | N-Channel | - | 40V | 130A (Tc) | 4.9 mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | 3810pF @ 25V | 4.5V, 10V | ±16V |