- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
21 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,830
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,556
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,853
有现货
|
ON Semiconductor | MOSFET P-CH 100V 8.2A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38W (Tc) | P-Channel | - | 100V | 8.2A (Tc) | 290 mOhm @ 4.1A, 10V | 4V @ 250µA | 27nC @ 10V | 800pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,530
有现货
|
ON Semiconductor | MOSFET P-CH 200V 2.15A TO220F | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38W (Tc) | P-Channel | - | 200V | 2.15A (Tc) | 1.4 Ohm @ 1.7A, 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | 10V | ±30V | ||
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|
|
获得报价 |
2,165
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,365
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,987
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
654
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,485
有现货
|
Infineon Technologies | MOSFET P-CH 100V 4A TO252-3 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4A (Tc) | 1 Ohm @ 2.8A, 10V | 4V @ 380µA | 12nC @ 10V | 319pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,989
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,183
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,465
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,485
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
3,265
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,316
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
2,528
有现货
|
Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,160
有现货
|
Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,071
有现货
|
Infineon Technologies | MOSFET P-CH 100V 4.2A TO252-3 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 38W (Tc) | P-Channel | - | 100V | 4.2A (Tc) | 850 mOhm @ 3A, 10V | 2V @ 380µA | 16nC @ 10V | 372pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,264
有现货
|
ON Semiconductor | MOSFET P-CH 200V 3.4A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 38W (Tc) | P-Channel | - | 200V | 3.4A (Tc) | 1.4 Ohm @ 1.7A, 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,493
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
744
有现货
|
Infineon Technologies | MOSFET P-CH 55V 11A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 38W (Tc) | P-Channel | - | 55V | 11A (Tc) | 175 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V |
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