- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
1,257
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 48W (Tc) | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,107
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,221
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 55V | 20A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,613
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 48W (Tc) | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,019
有现货
|
Infineon Technologies | MOSFET N-CH 55V 30A I-PAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 48W (Tc) | N-Channel | - | 55V | 30A (Tc) | 24.5 mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | 10V | ±20V |