- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,566
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 250W (Tc) | N-Channel | - | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
|
获得报价 |
961
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 200W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,256
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 800V | 10A (Ta) | 1 Ohm @ 5A, 10V | 4V @ 1mA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,677
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 900V | 9A (Ta) | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | 2000pF @ 25V | 10V | ±30V | |||
|
获得报价 |
3,537
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 6A (Ta) | 1.7 Ohm @ 3A, 10V | 4V @ 600µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,980
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO220SIS | π-MOSVIII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 900V | 7A (Ta) | 2 Ohm @ 3.5A, 10V | 4V @ 700µA | 32nC @ 10V | 1350pF @ 25V | 10V | ±30V |