- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,968
有现货
|
Rohm Semiconductor | MOSFET N-CH 600V 4A TO220FM | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,673
有现货
|
Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,939
有现货
|
Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,015
有现货
|
Rohm Semiconductor | MOSFET N-CHANNEL 600V 4A TO263 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 58W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 5V @ 1mA | 10.2nC @ 10V | 280pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,406
有现货
|
Diodes Incorporated | MOSFET N-CH 30V 10A 8SO | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.42W (Ta) | N-Channel | - | 30V | 10A (Ta) | 21.5 mOhm @ 10A, 10V | 2V @ 250µA | 10.2nC @ 10V | 493.5pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
获得报价 |
1,649
有现货
|
Diodes Incorporated | MOSFET N-CH 30V 10A 8SO | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.42W (Ta) | N-Channel | - | 30V | 10A (Ta) | 21.5 mOhm @ 10A, 10V | 2V @ 250µA | 10.2nC @ 10V | 493.5pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
获得报价 |
2,125
有现货
|
Diodes Incorporated | MOSFET N-CH 30V 10A 8SO | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.42W (Ta) | N-Channel | - | 30V | 10A (Ta) | 21.5 mOhm @ 10A, 10V | 2V @ 250µA | 10.2nC @ 10V | 493.5pF @ 15V | 4.5V, 10V | ±25V |