- 零件状态 :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
2,779
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,808
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,742
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,831
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,772
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,228
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,214
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,362
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,630
有现货
|
Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | DIRECTFET™ MT | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 30A (Ta), 170A (Tc) | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | 4.5V, 10V | ±20V |