- FET特性 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
13 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,411
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A 5DFN | DTMOSIV | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 139W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,170
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A 5DFN | DTMOSIV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 139W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
3,979
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 139W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,780
有现货
|
ON Semiconductor | MOSFET N-CH 200V 19A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 139W (Tc) | N-Channel | - | 200V | 19A (Tc) | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,162
有现货
|
ON Semiconductor | MOSFET N-CH 250V 15.6A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 139W (Tc) | N-Channel | - | 250V | 15.6A (Tc) | 270 mOhm @ 7.8A, 10V | 4V @ 250µA | 53.5nC @ 10V | 1080pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,229
有现货
|
ON Semiconductor | MOSFET N-CH 200V 19A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 139W (Tc) | N-Channel | - | 200V | 19A (Tc) | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
2,462
有现货
|
ON Semiconductor | MOSFET N-CH 250V 14A TO-220 | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 139W (Tc) | N-Channel | - | 250V | 14A (Tc) | 280 mOhm @ 7A, 10V | 4V @ 250µA | 60nC @ 10V | 1600pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,590
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 4A TO-220 | POWER MOS 7® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 [K] | 139W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 1mA | 34nC @ 10V | 694pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,323
有现货
|
ON Semiconductor | SUPERFET3 650V PQFN88 | SuperFET® III | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 139W (Tc) | N-Channel | - | 650V | 17A (Tc) | 180 mOhm @ 8.5A, 10V | 4.5V @ 1.8mA | 33nC @ 10V | 1350pF @ 400V | 10V | ±30V | ||
|
|
|
获得报价 |
2,624
有现货
|
ON Semiconductor | SUPERFET3 650V PQFN88 | SuperFET® III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 139W (Tc) | N-Channel | - | 650V | 17A (Tc) | 180 mOhm @ 8.5A, 10V | 4.5V @ 1.8mA | 33nC @ 10V | 1350pF @ 400V | 10V | ±30V | ||
|
|
|
获得报价 |
2,759
有现货
|
ON Semiconductor | SUPERFET3 650V PQFN88 | SuperFET® III | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 139W (Tc) | N-Channel | - | 650V | 17A (Tc) | 180 mOhm @ 8.5A, 10V | 4.5V @ 1.8mA | 33nC @ 10V | 1350pF @ 400V | 10V | ±30V | ||
|
|
获得报价 |
1,820
有现货
|
Microsemi Corporation | MOSFET N-CH 1000V 4A TO-247 | POWER MOS 7® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 139W (Tc) | N-Channel | - | 1000V | 4A (Tc) | 3 Ohm @ 2A, 10V | 5V @ 1mA | 34nC @ 10V | 694pF @ 25V | 10V | ±30V | ||
|
|
|
获得报价 |
1,977
有现货
|
ON Semiconductor | MOSFET N-CH 200V 19A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 139W (Tc) | N-Channel | - | 200V | 19A (Tc) | 170 mOhm @ 9.5A, 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | 10V | ±30V |
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