- 零件状态 :
- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,133
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 9.9A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | 200V | 9.9A (Tc) | 180 mOhm @ 5.9A, 5V | 2V @ 250µA | 66nC @ 10V | 1800pF @ 25V | 4V, 5V | ±10V | ||
|
|
获得报价 |
3,578
有现货
|
ON Semiconductor | MOSFET N-CH 100V 7.3A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 40W (Tc) | N-Channel | 100V | 7.3A (Tc) | 350 mOhm @ 3.65A, 10V | 2V @ 250µA | 6nC @ 5V | 290pF @ 25V | 5V, 10V | ±20V | ||
|
|
获得报价 |
2,456
有现货
|
ON Semiconductor | MOSFET N-CH 200V 9.8A TO-220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 40W (Tc) | N-Channel | 200V | 9.8A (Tc) | 180 mOhm @ 4.9A, 5V | 2V @ 250µA | 56nC @ 5V | 1705pF @ 25V | 5V | ±20V | ||
|
|
获得报价 |
2,860
有现货
|
Vishay Siliconix | MOSFET N-CH 200V 9.9A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | 200V | 9.9A (Tc) | 180 mOhm @ 5.9A, 5V | 2V @ 250µA | 66nC @ 10V | 1800pF @ 25V | 4V, 5V | ±10V |