- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,988
有现货
|
STMicroelectronics | MOSFET N-CH 650V 35A TO220FP | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 650V | 35A (Tc) | 78 mOhm @ 19.5A, 10V | 5V @ 250µA | 91nC @ 10V | 3375pF @ 100V | 10V | ±25V | ||
|
|
获得报价 |
822
有现货
|
STMicroelectronics | MOSFET N-CH 650V 42A TO-220FP | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 650V | 42A (Tc) | 63 mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | 10V | ±25V | ||
|
|
获得报价 |
2,870
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 300 mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
1,016
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 5A (Ta) | 1.43 Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,313
有现货
|
STMicroelectronics | MOSFET N-CH 650V 33A TO-220FP | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 650V | 33A (Tc) | 79 mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | 4650pF @ 100V | 10V | ±25V | ||
|
|
获得报价 |
1,235
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
1,166
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13A TO-220SIS | DTMOSII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 650V | 13A (Ta) | 380 mOhm @ 6.5A, 10V | 5V @ 1mA | 17nC @ 10V | 950pF @ 10V | 10V | ±30V |