- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
10 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,177
有现货
|
Infineon Technologies | MOSFET N-CH 650V 1.8A TO251-3 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,291
有现货
|
Infineon Technologies | MOSFET N-CH 650V 1.8A DPAK | CoolMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,977
有现货
|
Infineon Technologies | MOSFET N-CH 650V 1.8A DPAK | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,306
有现货
|
Infineon Technologies | MOSFET N-CH 650V 1.8A D2PAK | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,091
有现货
|
Infineon Technologies | MOSFET N-CH 650V 1.8A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,176
有现货
|
STMicroelectronics | MOSFET N-CH 650V 7A I2PAKFP | MDmesh™ II Plus | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 25W (Tc) | N-Channel | - | 650V | 7A (Tc) | 670 mOhm @ 3.5A, 10V | 4V @ 250µA | 12.5nC @ 10V | 410pF @ 100V | 10V | ±25V | ||
|
|
获得报价 |
3,348
有现货
|
Infineon Technologies | MOSFET N-CH 650V 1.8A IPAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 25W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 3 Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | 10V | ±20V | ||
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|
获得报价 |
2,410
有现货
|
STMicroelectronics | MOSFET N-CH 650V 7A TO-220FP | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 650V | 7A (Tc) | 670 mOhm @ 3.5A, 10V | 4V @ 250µA | 12.5nC @ 10V | 410pF @ 100V | 10V | ±25V | ||
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|
|
获得报价 |
3,049
有现货
|
STMicroelectronics | MOSFET N-CH 1050V 3A TO-220FP | MDmesh™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220 Full Pack | 25W (Tc) | N-Channel | - | 1050V | 3A (Tc) | 3.5 Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5nC @ 10V | 210pF @ 100V | 10V | ±30V | ||
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|
|
获得报价 |
3,195
有现货
|
STMicroelectronics | MOSFET N-CH 950V 3.5A TO220FP | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 950V | 3.5A (Tc) | 2.5 Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5nC @ 10V | 220pF @ 100V | 10V | 30V |
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