- 零件状态 :
- 功耗(最大) :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,512
有现货
|
Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
3,488
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT-223 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
2,150
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
1,663
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
3,842
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
1,890
有现货
|
Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.79W (Ta) | N-Channel | - | 100V | 370mA (Ta) | 6 Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | 70pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
761
有现货
|
Infineon Technologies | MOSFET N-CH 4SOT223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | 95pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
895
有现货
|
Infineon Technologies | MOSFET N-CH 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | 95pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
957
有现货
|
Infineon Technologies | MOSFET N-CH 4SOT223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 240V | 350mA (Ta) | 6 Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | 95pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
2,790
有现货
|
Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
2,969
有现货
|
Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | |||
|
获得报价 |
1,358
有现货
|
Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V |