- 供应商设备包 :
- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,291
有现货
|
Rohm Semiconductor | MOSFET N-CH 800V 5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | - | 800V | 5A (Tc) | 2.08 Ohm @ 2.5A, 10V | 5V @ 1mA | 21nC @ 10V | 485pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,833
有现货
|
ON Semiconductor | MOSFET N-CH 500V 3.9A TO-220F | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | - | 500V | 3.9A (Tc) | 2 Ohm @ 1.95A, 10V | 5V @ 250µA | 12nC @ 10V | 485pF @ 25V | 10V | ±25V | ||
|
|
获得报价 |
1,170
有现货
|
ON Semiconductor | MOSFET N-CH 500V 4.2A TO-220F | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 30W (Tc) | N-Channel | - | 500V | 4.2A (Tc) | 1.75 Ohm @ 2.1A, 10V | 5V @ 250µA | 12nC @ 10V | 485pF @ 25V | 10V | ±25V | ||
|
|
获得报价 |
1,667
有现货
|
STMicroelectronics | MOSFET N-CH 800V 2.5A TO220FP | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 800V | 2.5A (Tc) | 4.5 Ohm @ 1.25A, 10V | 4.5V @ 50µA | 19nC @ 10V | 485pF @ 25V | 10V | ±30V |