- 功耗(最大) :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
884
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 94W (Tc) | N-Channel | - | 150V | 21A (Tc) | 82 mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,045
有现货
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 55V | 75A (Tc) | 7.5 mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | 2840pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
934
有现货
|
Infineon Technologies | MOSFET N-CH 150V 21A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 94W (Tc) | N-Channel | - | 150V | 21A (Tc) | 82 mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
625
有现货
|
Infineon Technologies | MOSFET N-CH 55V 75A D2PAK | HEXFET® | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 140W (Tc) | N-Channel | - | 55V | 75A (Tc) | 7.5 mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | 2840pF @ 25V | 10V | ±20V |