- 供应商设备包 :
- FET特性 :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
2,507
有现货
|
Infineon Technologies | MOSFET NCH 600V 3.2A TO251 | CoolMOS™ | Discontinued at Digi-Key | Bulk | MOSFET (Metal Oxide) | -55°C ~ 155°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251 | 28.4W (Tc) | N-Channel | Super Junction | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||
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获得报价 |
3,462
有现货
|
Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 28.4W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||
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获得报价 |
1,031
有现货
|
Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 28.4W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||
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获得报价 |
1,018
有现货
|
Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | CoolMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 28.4W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V |