- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,771
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 | OptiMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.5 mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | 4400pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,031
有现货
|
Infineon Technologies | MOSFET N-CH 55V 80A TO263-3 | OptiMOS™ | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.2 mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | 4400pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,228
有现货
|
Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | OptiMOS™ | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 300W (Tc) | N-Channel | - | 40V | 180A (Tc) | 1.5 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
2,254
有现货
|
Infineon Technologies | MOSFET N-CH 40V 180A TO263-7 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7-3 | 300W (Tc) | N-Channel | - | 40V | 180A (Tc) | 1.5 mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | 14300pF @ 25V | 10V | ±20V |