- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- Vgs(最大值) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,656
有现货
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | ||
|
|
获得报价 |
2,271
有现货
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | ||
|
|
获得报价 |
2,701
有现货
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | ||
|
|
获得报价 |
700
有现货
|
Rohm Semiconductor | MOSFET N-CH 200V 3A DPAK | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | 200V | 3A (Ta) | 900 mOhm @ 1.5A, 10V | 4V @ 1mA | 8.5nC @ 10V | 230pF @ 10V | 10V | ±30V | ||
|
|
获得报价 |
2,791
有现货
|
Rohm Semiconductor | MOSFET N-CH 200V 3A DPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 20W (Tc) | N-Channel | 200V | 3A (Ta) | 900 mOhm @ 1.5A, 10V | 4V @ 1mA | 8.5nC @ 10V | 230pF @ 10V | 10V | ±30V |