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漏极-源极电压(Vdss) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
11 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IPD14N06S280ATMA1
获得报价
RFQ
3,916
有现货
Infineon Technologies MOSFET N-CH 55V 17A TO252-3 OptiMOS™ Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 47W (Tc) N-Channel - 55V 17A (Tc) 80 mOhm @ 7A, 10V 4V @ 14µA 10nC @ 10V 293pF @ 25V 10V ±20V
AUIRFR024N
获得报价
RFQ
1,263
有现货
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 45W (Tc) N-Channel - 55V 17A (Tc) 75 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V
SPW17N80C3A
获得报价
RFQ
3,866
有现货
Infineon Technologies MOSFET N-CH 800V 17A TO-247 CoolMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 227W (Tc) N-Channel - 800V 17A (Tc) 290 mOhm @ 11A, 10V 3.9V @ 1mA 177nC @ 10V 2320pF @ 25V 10V ±20V
IRF530NSTRRPBF
获得报价
RFQ
2,639
有现货
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 70W (Tc) N-Channel - 100V 17A (Tc) 90 mOhm @ 9A, 10V 4V @ 250µA 37nC @ 10V 920pF @ 25V 10V ±20V
IRFR024NTRRPBF
获得报价
RFQ
2,789
有现货
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 75 mOhm @ 10A, 10V 4V @ 250µA 20nC @ 10V 370pF @ 25V 10V ±20V
AUIRLR3410
获得报价
RFQ
991
有现货
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
AUIRLR024N
获得报价
RFQ
1,180
有现货
Infineon Technologies MOSFET N-CH 55V 17A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 45W (Tc) N-Channel - 55V 17A (Tc) 65 mOhm @ 10A, 10V 2V @ 250µA 15nC @ 5V 480pF @ 25V 4V, 10V ±16V
IRL530NSPBF
获得报价
RFQ
941
有现货
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 79W (Tc) N-Channel - 100V 17A (Tc) 100 mOhm @ 9A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±20V
IRF530NSPBF
获得报价
RFQ
2,218
有现货
Infineon Technologies MOSFET N-CH 100V 17A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 70W (Tc) N-Channel - 100V 17A (Tc) 90 mOhm @ 9A, 10V 4V @ 250µA 37nC @ 10V 920pF @ 25V 10V ±20V
STB24NM60N
获得报价
RFQ
3,824
有现货
STMicroelectronics MOSFET N-CH 600V 17A D2PAK MDmesh™ II Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel - 600V 17A (Tc) 190 mOhm @ 8A, 10V 4V @ 250µA 46nC @ 10V 1400pF @ 50V 10V ±30V
STB24NM60N
获得报价
RFQ
3,846
有现货
STMicroelectronics MOSFET N-CH 600V 17A D2PAK MDmesh™ II Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 125W (Tc) N-Channel - 600V 17A (Tc) 190 mOhm @ 8A, 10V 4V @ 250µA 46nC @ 10V 1400pF @ 50V 10V ±30V
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