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驱动电压(最大Rds接通,最小Rds接通) :
13 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
EPC2034ENGRT
获得报价
RFQ
878
有现货
EPC TRANS GAN 200V 31A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 150°C (TJ) Surface Mount Die Die - N-Channel 200V 31A (Ta) 10 mOhm @ 20A, 5V 2.5V @ 7mA 8.5nC @ 5V 940pF @ 100V 5V +6V, -4V
RJK2055DPA-00#J0
获得报价
RFQ
2,705
有现货
Renesas Electronics America MOSFET N-CH 200V W-PAK - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 30W (Tc) N-Channel 200V 20A (Ta) 69 mOhm @ 10A, 10V - 38nC @ 10V 2400pF @ 25V - -
EPC2012
获得报价
RFQ
2,271
有现货
EPC TRANS GAN 200V 3A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die - N-Channel 200V 3A (Ta) 100 mOhm @ 3A, 5V 2.5V @ 1mA 1.8nC @ 5V 145pF @ 100V 5V +6V, -5V
EPC2010
获得报价
RFQ
3,575
有现货
EPC TRANS GAN 200V 12A BUMPED DIE eGaN® Discontinued at Digi-Key Cut Tape (CT) GaNFET (Gallium Nitride) -40°C ~ 125°C (TJ) Surface Mount Die Die - N-Channel 200V 12A (Ta) 25 mOhm @ 6A, 5V 2.5V @ 3mA 7.5nC @ 5V 540pF @ 100V 5V +6V, -4V
SPD07N20
获得报价
RFQ
713
有现货
Infineon Technologies MOSFET N-CH 200V 7A TO-252 SIPMOS® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 40W (Tc) N-Channel 200V 7A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 1mA 31.5nC @ 10V 530pF @ 25V 10V ±20V
2SK2887TL
获得报价
RFQ
2,791
有现货
Rohm Semiconductor MOSFET N-CH 200V 3A DPAK - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 20W (Tc) N-Channel 200V 3A (Ta) 900 mOhm @ 1.5A, 10V 4V @ 1mA 8.5nC @ 10V 230pF @ 10V 10V ±30V
BUZ30AH3045AATMA1
获得报价
RFQ
3,316
有现货
Infineon Technologies MOSFET N-CH 200V 21A TO-263 SIPMOS® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 125W (Tc) N-Channel 200V 21A (Tc) 130 mOhm @ 13.5A, 10V 4V @ 1mA - 1900pF @ 25V 10V ±20V
AOD4504
获得报价
RFQ
1,092
有现货
Alpha & Omega Semiconductor Inc. MOSFET N-CH 200V 6A TO252 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.5W (Ta), 42.5W (Tc) N-Channel 200V 1.5A (Ta), 6A (Tc) 400 mOhm @ 3A, 10V 3.7V @ 250µA 115nC @ 10V 328pF @ 100V 10V ±20V
IRF6641TRPBF
获得报价
RFQ
3,386
有现货
Infineon Technologies MOSFET N-CH 200V 4.6A DIRECTFET HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MZ DIRECTFET™ MZ 2.8W (Ta), 89W (Tc) N-Channel 200V 4.6A (Ta), 26A (Tc) 59.9 mOhm @ 5.5A, 10V 4.9V @ 150µA 48nC @ 10V 2290pF @ 25V 10V ±20V
TPH1110ENH,L1Q
获得报价
RFQ
1,519
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8SOP U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN1110ENH,L1Q
获得报价
RFQ
867
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 200V 7.2A 8TSON U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel 200V 7.2A (Ta) 114 mOhm @ 3.6A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
AOD450
获得报价
RFQ
1,297
有现货
Alpha & Omega Semiconductor Inc. MOSFET N-CH 200V 3.8A TO252 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 2.1W (Ta), 25W (Tc) N-Channel 200V 3.8A (Tc) 700 mOhm @ 3.8A, 15V 6V @ 250µA 3.82nC @ 10V 215pF @ 25V 10V ±30V
RCD051N20TL
获得报价
RFQ
1,502
有现货
Rohm Semiconductor MOSFET N-CH 200V 5A CPT3 - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 850mW (Ta), 20W (Tc) N-Channel 200V 5A (Tc) 760 mOhm @ 2.5A, 10V 5.25V @ 1mA 8.3nC @ 10V 330pF @ 25V 10V ±30V
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