- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- Vgs(最大值) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,270
有现货
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
878
有现货
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
2,656
有现货
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | ||
|
|
获得报价 |
2,271
有现货
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | ||
|
|
获得报价 |
2,701
有现货
|
EPC | TRANS GAN 200V 3A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 3A (Ta) | 100 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.8nC @ 5V | 145pF @ 100V | 5V | +6V, -5V | ||
|
|
获得报价 |
1,839
有现货
|
EPC | TRANS GAN 200V 12A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 12A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,575
有现货
|
EPC | TRANS GAN 200V 12A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 12A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
1,949
有现货
|
EPC | TRANS GAN 200V 12A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 12A (Ta) | 25 mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,900
有现货
|
EPC | TRANS GAN 200V 31A BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | N-Channel | - | 200V | 31A (Ta) | 10 mOhm @ 20A, 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | 5V | +6V, -4V |