- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,241
有现货
|
Sanken | MOSFET N-CH 30V 48A TO-252 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 47W (Tc) | N-Channel | - | 30V | 48A (Tc) | 4 mOhm @ 47.2A, 10V | 2.5V @ 650µA | 38.8nC @ 10V | 2460pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,729
有现货
|
Nexperia USA Inc. | MOSFET N-CH 30V 7A LFPAK | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 47W (Tc) | N-Channel | - | 30V | 66A (Tc) | 6 mOhm @ 15A, 10V | 2.2V @ 1mA | 13.7nC @ 10V | 832pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,259
有现货
|
Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 47W (Tc) | N-Channel | - | 30V | 50A (Tc) | 7.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | 1900pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
767
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A DP TO252-3 | U-MOSVI-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 30V | 50A (Ta) | 7.5 mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V |