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漏极-源极电压(Vdss) :
25°C时的电流-连续漏极(Id) :
驱动电压(最大Rds接通,最小Rds接通) :
Vgs(最大值) :
12 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
AUIRLR3105
获得报价
RFQ
601
有现货
Infineon Technologies MOSFET N-CH 55V 25A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 57W (Tc) N-Channel - 55V 25A (Tc) 37 mOhm @ 15A, 10V 3V @ 250µA 20nC @ 5V 710pF @ 25V 5V, 10V ±16V
IRFR3303PBF
获得报价
RFQ
1,730
有现货
Infineon Technologies MOSFET N-CH 30V 33A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 57W (Tc) N-Channel - 30V 33A (Tc) 31 mOhm @ 18A, 10V 4V @ 250µA 29nC @ 10V 750pF @ 25V 10V ±20V
IRLR3105TRLPBF
获得报价
RFQ
2,847
有现货
Infineon Technologies MOSFET N-CH 55V 25A DPAK HEXFET® Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 57W (Tc) N-Channel - 55V 25A (Tc) 37 mOhm @ 15A, 10V 3V @ 250µA 20nC @ 5V 710pF @ 25V 5V, 10V ±16V
IRL3302L
获得报价
RFQ
2,789
有现货
Vishay Siliconix MOSFET N-CH 20V 39A TO-262 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 57W (Tc) N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V
IPD50R500CEATMA1
获得报价
RFQ
1,781
有现货
Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO252 CoolMOS™ CE Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel - 500V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IPD50R500CEATMA1
获得报价
RFQ
3,004
有现货
Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO252 CoolMOS™ CE Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel - 500V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IPD50R500CEATMA1
获得报价
RFQ
1,869
有现货
Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO252 CoolMOS™ CE Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel - 500V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IRF3707ZSPBF
获得报价
RFQ
2,547
有现货
Infineon Technologies MOSFET N-CH 30V 59A D2PAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 57W (Tc) N-Channel - 30V 59A (Tc) 9.5 mOhm @ 21A, 10V 2.25V @ 25µA 15nC @ 4.5V 1210pF @ 15V 4.5V, 10V ±20V
IRLR3105PBF
获得报价
RFQ
2,916
有现货
Infineon Technologies MOSFET N-CH 55V 25A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 57W (Tc) N-Channel - 55V 25A (Tc) 37 mOhm @ 15A, 10V 3V @ 250µA 20nC @ 5V 710pF @ 25V 5V, 10V ±16V
IPD50R500CEBTMA1
获得报价
RFQ
2,379
有现货
Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO252 CoolMOS™ Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel Super Junction 500V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IPD50R500CEBTMA1
单位
$1.01
获得报价
RFQ
1,888
有现货
Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO252 CoolMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel Super Junction 500V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
IPD50R500CEBTMA1
获得报价
RFQ
3,288
有现货
Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO252 CoolMOS™ Discontinued at Digi-Key Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel Super Junction 500V 7.6A (Tc) 500 mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7nC @ 10V 433pF @ 100V 13V ±20V
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