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10 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
TK16V60W,LVQ
获得报价
RFQ
1,411
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 139W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK16V60W,LVQ
获得报价
RFQ
1,170
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 139W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 790µA 38nC @ 10V 1350pF @ 300V 10V ±30V
TK12V60W,LVQ
获得报价
RFQ
3,516
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12V60W,LVQ
获得报价
RFQ
1,470
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK31V60W,LVQ
获得报价
RFQ
1,983
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 98 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK31V60W,LVQ
获得报价
RFQ
680
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 30.8A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 98 mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86nC @ 10V 3000pF @ 300V 10V ±30V
TK10V60W,LVQ
获得报价
RFQ
2,144
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 600V 9.7A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 88.3W (Tc) N-Channel Super Junction 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 10V ±30V
TK10V60W,LVQ
获得报价
RFQ
3,810
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 600V 9.7A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 88.3W (Tc) N-Channel Super Junction 600V 9.7A (Ta) 380 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 10V ±30V
TK20V60W,LVQ
获得报价
RFQ
1,868
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 20A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel Super Junction 600V 20A (Ta) 170 mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V 1680pF @ 300V 10V ±30V
TK20V60W,LVQ
单位
$5.62
获得报价
RFQ
823
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 20A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 156W (Tc) N-Channel Super Junction 600V 20A (Ta) 170 mOhm @ 10A, 10V 3.7V @ 1mA 48nC @ 10V 1680pF @ 300V 10V ±30V
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