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图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
IPA80R650CEXKSA1
获得报价
RFQ
1,814
有现货
Infineon Technologies MOSFET N-CH 800V TO-220-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 33W (Tc) N-Channel - 800V 4.5A (Tc) 650 mOhm @ 5.1A, 10V 3.9V @ 470µA 45nC @ 10V 1100pF @ 100V 10V ±20V
IPA80R460CEXKSA1
获得报价
RFQ
3,866
有现货
Infineon Technologies MOSFET N-CH 800V TO-220-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 34W (Tc) N-Channel - 800V 5A (Tc) 460 mOhm @ 7.1A, 10V 3.9V @ 680µA 64nC @ 10V 1600pF @ 100V 10V ±20V
IPA80R1K4CEXKSA1
获得报价
RFQ
2,980
有现货
Infineon Technologies MOSFET N-CH 800V TO-220-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 31W (Tc) N-Channel - 800V 2.8A (Tc) 1.4 Ohm @ 2.3A, 10V 3.9V @ 240µA 23nC @ 10V 570pF @ 100V 10V ±20V
IPA80R310CEXKSA1
获得报价
RFQ
2,697
有现货
Infineon Technologies MOSFET N-CH 800V TO-220-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 35W (Tc) N-Channel - 800V 6.8A (Tc) 310 mOhm @ 11A, 10V 3.9V @ 1mA 91nC @ 10V 2320pF @ 100V - -
IPA80R1K0CEXKSA1
获得报价
RFQ
1,144
有现货
Infineon Technologies MOSFET N-CH 800V TO-220-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 32W (Tc) N-Channel - 800V 3.6A (Tc) 950 mOhm @ 3.6A, 10V 3.9V @ 250µA 31nC @ 10V 785pF @ 100V 10V ±20V
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