- 系列 :
- 功耗(最大) :
- FET型 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
639
有现货
|
Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,229
有现货
|
Diodes Incorporated | MOSFET N-CH 100V 2.9A 6UDFN | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | N-Channel | - | 100V | 2.9A (Ta) | 160 mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | 1167pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
1,402
有现货
|
Diodes Incorporated | MOSFET N-CH 100V 2.9A 6UDFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type E) | 660mW (Ta) | N-Channel | - | 100V | 2.9A (Ta) | 160 mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | 1167pF @ 25V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,738
有现货
|
Diodes Incorporated | MOSFET P-CH 20V 2.9A 8DFN | - | Discontinued at Digi-Key | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3020B (3x2) | 1.5W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.9A (Ta) | 95 mOhm @ 2.8A, 4.5V | 1.3V @ 250µA | - | 632pF @ 10V | 1.8V, 4.5V | ±12V | |||
|
获得报价 |
1,297
有现货
|
Diodes Incorporated | MOSFET P-CH 20V 2.9A 8DFN | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3020B (3x2) | 1.5W (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.9A (Ta) | 95 mOhm @ 2.8A, 4.5V | 1.3V @ 250µA | - | 632pF @ 10V | 1.8V, 4.5V | ±12V |