- 25°C时的电流-连续漏极(Id) :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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|
获得报价 |
1,228
有现货
|
ON Semiconductor | MOSFET N-CH 30V 13A SO-8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 900mW (Ta), 86.2W (Tc) | N-Channel | - | 30V | 13A (Ta), 130A (Tc) | 3 mOhm @ 30A, 10V | 2.5V @ 250µA | 48nC @ 4.5V | 4500pF @ 12V | 4.5V, 11.5V | ±20V | ||
|
|
获得报价 |
2,768
有现货
|
Infineon Technologies | DIFFERENTIATED MOSFETS | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 FL | 3W (Ta), 115W (Tc) | N-Channel | - | 30V | 39A (Ta), 100A (Tc) | 1.1 mOhm @ 30A, 10V | 2V @ 250µA | 48nC @ 4.5V | 6300pF @ 15V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
3,106
有现货
|
Vishay Siliconix | MOSFET N-CH 40V 60A POWERPAKSO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 36.7W (Tc) | N-Channel | - | 40V | 60A (Tc) | 2.35 mOhm @ 15A, 10V | 2.3V @ 250µA | 48nC @ 4.5V | 5300pF @ 20V | 4.5V, 10V | +20V, -16V | ||
|
|
获得报价 |
1,381
有现货
|
Vishay Siliconix | MOSFET N-CH 25V 60A POWERPAKSO-8 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 54.3W (Tc) | N-Channel | - | 25V | 60A (Tc) | 0.96 mOhm @ 15A, 10V | 2.4V @ 250µA | 48nC @ 4.5V | 5150pF @ 10V | 4.5V, 10V | +20V, -16V | ||
|
|
获得报价 |
3,086
有现货
|
Infineon Technologies | MOSFET N-CH 20V 8.7A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 8.7A (Ta) | 22 mOhm @ 4.1A, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | 2.7V, 4.5V | ±12V | ||
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|
获得报价 |
1,178
有现货
|
Infineon Technologies | MOSFET N-CH 100V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 140W (Tc) | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V |