- FET型 :
- 25°C时的电流-连续漏极(Id) :
- 栅极电荷(Qg)(最大)@Vgs :
10 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,435
有现货
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,181
有现货
|
Vishay Siliconix | MOSFET P-CH 200V 1.9A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | P-Channel | - | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,328
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 1.7A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 25W (Tc) | N-Channel | - | 400V | 1.7A (Tc) | 3.6 Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
1,495
有现货
|
Vishay Siliconix | MOSFET P-CH 200V 0.4A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | P-Channel | - | 200V | 400mA (Ta) | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,882
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 350MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | - | 400V | 350mA (Ta) | 3.6 Ohm @ 210mA, 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
653
有现货
|
Vishay Siliconix | MOSFET N-CH 400V 2A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 36W (Tc) | N-Channel | - | 400V | 2A (Tc) | 3.6 Ohm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
3,222
有现货
|
ON Semiconductor | MOSFET N-CH 600V 1A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 28W (Tc) | N-Channel | - | 600V | 1A (Tc) | 11.5 Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V | |||
|
获得报价 |
1,885
有现货
|
Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 20W (Tc) | P-Channel | - | 200V | 1.8A (Tc) | 3 Ohm @ 900mA, 10V | 4V @ 250µA | 11nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
获得报价 |
2,022
有现货
|
ON Semiconductor | MOSFET N-CH 600V 300MA TO-92 | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta), 3W (Tc) | N-Channel | - | 600V | 300mA (Tc) | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V | |||
|
获得报价 |
715
有现货
|
ON Semiconductor | MOSFET N-CH 600V 300MA TO-92 | QFET® | Active | Tape & Box (TB) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Ta), 3W (Tc) | N-Channel | - | 600V | 300mA (Tc) | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V |