- FET型 :
- 25°C时的电流-连续漏极（Id） :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
15 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
3,678
有现货
|
IXYS | MOSFET N-CH 200V 88A TO-247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 500W (Tc) | N-Channel | - | 200V | 88A (Tc) | 30 mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | 10V | ±30V | ||
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|
|
获得报价 |
1,516
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 50A TO252AA | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 136W (Tc) | P-Channel | - | 30V | 50A (Tc) | 7 mOhm @ 20A, 10V | 2.5V @ 250µA | 146nC @ 10V | 5490pF @ 25V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,907
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,379
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
|
获得报价 |
1,186
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
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|
|
获得报价 |
2,954
有现货
|
IXYS | MOSFET N-CH 200V 88A PLUS247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 500W (Tc) | N-Channel | - | 200V | 88A (Tc) | 30 mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,547
有现货
|
IXYS | MOSFET N-CH 200V 88A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | 500W (Tc) | N-Channel | - | 200V | 88A (Tc) | 30 mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | 4150pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,466
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
1,250
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 40A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | P-Channel | - | 30V | 40A (Tc) | 5.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,289
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 40A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | P-Channel | - | 30V | 40A (Tc) | 5.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
3,182
有现货
|
Vishay Siliconix | MOSFET P-CH 30V 40A PPAK SO-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 48W (Tc) | P-Channel | - | 30V | 40A (Tc) | 5.5 mOhm @ 15A, 10V | 2.5V @ 250µA | 146nC @ 10V | 4230pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
768
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
905
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 28A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 250W (Tc) | N-Channel | - | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
3,909
有现货
|
Vishay Siliconix | MOSFET N-CH 650V 28A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 650V | 28A (Tc) | 117 mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | 3249pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,605
有现货
|
Infineon Technologies | MOSFET N-CH 55V 110A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V |
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