- 供应商设备包 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,903
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 40A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 68W (Tc) | P-Channel | - | 40V | 40A (Ta) | 9.1 mOhm @ 20A, 10V | 3V @ 1mA | 83nC @ 10V | 4140pF @ 10V | 6V, 10V | +10V, -20V | |||
|
获得报价 |
2,762
有现货
|
Infineon Technologies | MOSFET N-CH 30V 40A TDSON-8 | OptiMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 30W (Tc) | N-Channel | - | 30V | 10A (Ta), 40A (Tc) | 9.1 mOhm @ 20A, 10V | 2V @ 250µA | 23nC @ 10V | 1700pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,396
有现货
|
Infineon Technologies | MOSFET N-CH 30V 40A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 30W (Tc) | N-Channel | - | 30V | 10A (Ta), 40A (Tc) | 9.1 mOhm @ 20A, 10V | 2V @ 250µA | 23nC @ 10V | 1700pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
2,042
有现货
|
Infineon Technologies | MOSFET N-CH 30V 40A TDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 30W (Tc) | N-Channel | - | 30V | 10A (Ta), 40A (Tc) | 9.1 mOhm @ 20A, 10V | 2V @ 250µA | 23nC @ 10V | 1700pF @ 15V | 4.5V, 10V | ±20V | |||
|
获得报价 |
3,273
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 | ThunderFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 56.8W (Tc) | N-Channel | - | 100V | 58.8A (Tc) | 9.1 mOhm @ 20A, 10V | 3.5V @ 250µA | 56nC @ 10V | 2050pF @ 50V | 7.5V, 10V | ±20V | |||
|
获得报价 |
1,843
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 | ThunderFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 56.8W (Tc) | N-Channel | - | 100V | 58.8A (Tc) | 9.1 mOhm @ 20A, 10V | 3.5V @ 250µA | 56nC @ 10V | 2050pF @ 50V | 7.5V, 10V | ±20V | |||
|
获得报价 |
782
有现货
|
Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 | ThunderFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 5W (Ta), 56.8W (Tc) | N-Channel | - | 100V | 58.8A (Tc) | 9.1 mOhm @ 20A, 10V | 3.5V @ 250µA | 56nC @ 10V | 2050pF @ 50V | 7.5V, 10V | ±20V |