- FET型 :
- FET特性 :
- Vgs（th）（最大）@Id :
- 栅极电荷（Qg）（最大）@Vgs :
- 输入电容（Ciss）（最大）@Vds :
- 驱动电压（最大Rds接通，最小Rds接通） :
21 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
980
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 104W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,156
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,199
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 340 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
693
有现货
|
Diodes Incorporated | MOSFET P-CH 30V 11.5A | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
获得报价 |
2,105
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
2,909
有现货
|
Diodes Incorporated | MOSFET P-CH 30V POWERDI3333-8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
|
获得报价 |
996
有现货
|
Diodes Incorporated | MOSFET P-CH 30V POWERDI3333-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
|
获得报价 |
2,313
有现货
|
Diodes Incorporated | MOSFET P-CH 30V POWERDI3333-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
获得报价 |
1,344
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 11.5A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 110W (Tc) | N-Channel | Super Junction | 600V | 11.5A (Ta) | 300 mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
754
有现货
|
Diodes Incorporated | MOSFET P-CH 30V 11.5A POWERDI333 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
|
获得报价 |
1,151
有现货
|
Diodes Incorporated | MOSFET P-CH 30V 11.5A POWERDI333 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
|
获得报价 |
3,257
有现货
|
Diodes Incorporated | MOSFET P-CH 30V 11.5A POWERDI333 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 940mW (Ta) | P-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | 2246pF @ 15V | 4.5V, 10V | ±25V | ||
|
|
|
获得报价 |
1,801
有现货
|
Diodes Incorporated | MOSFET N-CH 40V 11.5A PWDI3333-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 930mW (Ta) | N-Channel | - | 40V | 11.5A (Ta) | 12 mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | 1810pF @ 20V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,954
有现货
|
ON Semiconductor | MOSFET N-CH 30V 11.5A 8SOIC | PowerTrench®, SyncFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 1mA | 30nC @ 10V | 1240pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,624
有现货
|
ON Semiconductor | MOSFET N-CH 30V 11.5A 8SOIC | PowerTrench®, SyncFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 1mA | 30nC @ 10V | 1240pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
604
有现货
|
ON Semiconductor | MOSFET N-CH 30V 11.5A 8SOIC | PowerTrench®, SyncFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 11.5A (Ta) | 10 mOhm @ 11.5A, 10V | 3V @ 1mA | 30nC @ 10V | 1240pF @ 15V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,444
有现货
|
Diodes Incorporated | MOSFET N-CH 40V 11.5A PWDI3333-8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 930mW (Ta) | N-Channel | - | 40V | 11.5A (Ta) | 12 mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | 1810pF @ 20V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
2,439
有现货
|
Diodes Incorporated | MOSFET N-CH 40V 11.5A PWDI3333-8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 930mW (Ta) | N-Channel | - | 40V | 11.5A (Ta) | 12 mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | 1810pF @ 20V | 4.5V, 10V | ±20V | ||
|
|
|
获得报价 |
1,384
有现货
|
Diodes Incorporated | MOSFET N-CH 40V 11.5A PWDI3333-8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 930mW (Ta) | N-Channel | - | 40V | 11.5A (Ta) | 12 mOhm @ 14A, 10V | 3V @ 250µA | 37nC @ 10V | 1810pF @ 20V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
897
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 11.5A TO220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 | TO-220 | 165W (Tc) | N-Channel | - | 800V | 11.5A (Ta) | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | 10V | ±20V | ||
|
|
获得报价 |
3,820
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 11.5A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 800V | 11.5A (Ta) | 450 mOhm @ 5.8A, 10V | 4V @ 570µA | 23nC @ 10V | 1400pF @ 300V | 10V | ±20V |
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