- 系列 :
- 供应商设备包 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
858
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
3,492
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
2,770
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | ||
|
|
获得报价 |
1,297
有现货
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,286
有现货
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | ||
|
|
获得报价 |
2,794
有现货
|
EPC | TRANS GAN 80V 90A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 80V | 90A (Ta) | 2.5 mOhm @ 29A, 5V | 2.5V @ 14mA | 15nC @ 5V | 1650pF @ 40V | 5V | +6V, -4V | ||
|
|
获得报价 |
2,931
有现货
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | ||
|
|
获得报价 |
2,337
有现货
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,254
有现货
|
EPC | TRANS GAN 60V 90A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 60V | 90A (Ta) | 2.2 mOhm @ 31A, 5V | 2.5V @ 16mA | 16nC @ 5V | 1780pF @ 30V | 5V | +6V, -4V |