- 供应商设备包 :
- 功耗(最大) :
- FET型 :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
- Vgs(最大值) :
19 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
675
有现货
|
ON Semiconductor | MOSFET P-CHANNEL 100V 31A DPAK | Automotive, AEC-Q101 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 84W (Tc) | P-Channel | 100V | 31A (Ta) | 75 mOhm @ 14A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2850pF @ 20V | 10V | ±20V | ||
|
|
获得报价 |
2,679
有现货
|
Texas Instruments | MOSFET N-CH 12V 31A 6DSBGA | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 1.65W (Ta) | N-Channel | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 2.5V, 4.5V | ±8V | ||
|
|
获得报价 |
2,551
有现货
|
Texas Instruments | MOSFET N-CH 12V 31A 6DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 1.65W (Ta) | N-Channel | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 2.5V, 4.5V | ±8V | ||
|
|
获得报价 |
892
有现货
|
Texas Instruments | MOSFET N-CH 12V 31A 6DSBGA | NexFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, DSBGA | 6-DSBGA | 1.65W (Ta) | N-Channel | 12V | 31A (Ta) | 20 mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7nC @ 4.5V | 715pF @ 6V | 2.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,999
有现货
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | ||
|
|
获得报价 |
1,723
有现货
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | ||
|
|
获得报价 |
1,083
有现货
|
EPC | TRANS GAN 150V 7MOHM BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 150V | 31A (Ta) | 7 mOhm @ 25A, 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | - | - | ||
|
|
获得报价 |
3,446
有现货
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,424
有现货
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,608
有现货
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,650
有现货
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | ||
|
|
获得报价 |
1,482
有现货
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | ||
|
|
获得报价 |
1,086
有现货
|
EPC | MOSFET NCH 40V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 40V | 31A (Ta) | 2.4 mOhm @ 30A, 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | - | - | ||
|
|
获得报价 |
813
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,487
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||
|
|
获得报价 |
3,857
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | 5V | +6V, -4V | ||
|
|
获得报价 |
627
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | ||
|
|
获得报价 |
621
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Cut Tape (CT) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - | ||
|
|
获得报价 |
1,931
有现货
|
EPC | MOSFET NCH 60V 31A DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | - | - | - | - | N-Channel | 60V | 31A (Ta) | 2.6 mOhm @ 30A, 5V | 2.5V @ 15mA | 17nC @ 5V | 1800pF @ 300V | - | - |