- 工作温度 :
- 功耗(最大) :
- FET型 :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,759
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
1,380
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
3,883
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
647
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
702
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
1,269
有现货
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | ||
|
|
获得报价 |
748
有现货
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
3,578
有现货
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V | ||
|
|
获得报价 |
3,094
有现货
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2.5W (Ta) | N-Channel | - | 60V | 6A (Ta) | 36 mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | 550pF @ 10V | 4V, 10V | ±20V |