- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
- 驱动电压(最大Rds接通,最小Rds接通) :
9 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,382
有现货
|
Vishay Siliconix | MOSFET N-CH 20V 8A 1212-8 | TrenchFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 18W (Tc) | N-Channel | - | 20V | 8A (Tc) | 28 mOhm @ 5A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | 490pF @ 10V | 1.8V, 4.5V | ±8V | ||
|
|
获得报价 |
659
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 8A TO-220SIS | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 18W (Tc) | N-Channel | - | 100V | 8A (Ta) | 120 mOhm @ 4A, 10V | 4V @ 1mA | 12.9nC @ 10V | 530pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
2,777
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ P7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 18W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 3.3 Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
3,357
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ P7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 18W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 3.3 Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
3,156
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO252-3 | CoolMOS™ P7 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 18W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 3.3 Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
671
有现货
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO251-3 | CoolMOS™ P7 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 18W (Tc) | N-Channel | - | 800V | 1.9A (Tc) | 3.3 Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | 120pF @ 500V | 10V | ±20V | ||
|
|
获得报价 |
1,828
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 60V 17A DPAK | Automotive, AEC-Q101 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 18W (Tc) | N-Channel | - | 60V | 17A (Tc) | 27.4 mOhm @ 10A, 10V | 2.1V @ 250µA | 3.4nC @ 4.5V | 400pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,988
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 60V 17A DPAK | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 18W (Tc) | N-Channel | - | 60V | 17A (Tc) | 27.4 mOhm @ 10A, 10V | 2.1V @ 250µA | 3.4nC @ 4.5V | 400pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
1,730
有现货
|
ON Semiconductor | MOSFET N-CHANNEL 60V 17A DPAK | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 18W (Tc) | N-Channel | - | 60V | 17A (Tc) | 27.4 mOhm @ 10A, 10V | 2.1V @ 250µA | 3.4nC @ 4.5V | 400pF @ 25V | 4.5V, 10V | ±16V |