- FET特性 :
- Rds开启（最大）@Id，Vgs :
-
- 1.3 Ohm @ 3A, 10V (2)
- 12 mOhm @ 15A, 10V (3)
- 14 mOhm @ 32A, 10V (1)
- 190 mOhm @ 7.9A, 10V (5)
- 190 mOhm @ 9A, 10V (4)
- 2.8 mOhm @ 40A, 10V (3)
- 230 mOhm @ 7.9A, 10V (1)
- 250 mOhm @ 6.9A, 10V (6)
- 3 mOhm @ 75A, 10V (3)
- 3.6 Ohm @ 1.95A, 10V (1)
- 30 mOhm @ 22A, 10V (2)
- 300 mOhm @ 6.9A, 10V (6)
- 363 mOhm @ 6A, 10V (3)
- 382 mOhm @ 6A, 10V (3)
- 4 mOhm @ 15A, 10V (3)
- 44 mOhm @ 16A, 10V (8)
- 445 mOhm @ 6A, 10V (2)
- 5.2 mOhm @ 15A, 10V (3)
- 6 mOhm @ 35A, 10V (1)
- 8 mOhm @ 42A, 10V (3)
- 8 mOhm @ 52A, 10V (6)
- 8.5 mOhm @ 15A, 10V (3)
- 800 mOhm @ 1.17A, 10V (3)
- 800 mOhm @ 4A, 10V (5)
- 850 mOhm @ 4A, 10V (1)
- 栅极电荷（Qg）（最大）@Vgs :
-
- 130nC @ 10V (3)
- 18nC @ 10V (1)
- 21.5nC @ 10V (2)
- 22nC @ 10V (7)
- 25nC @ 10V (1)
- 33nC @ 10V (2)
- 35nC @ 10V (6)
- 36nC @ 10V (2)
- 38nC @ 10V (5)
- 40nC @ 10V (6)
- 43nC @ 10V (1)
- 45nC @ 10V (2)
- 55nC @ 10V (3)
- 56nC @ 10V (6)
- 60nC @ 5V (6)
- 64nC @ 10V (3)
- 66nC @ 5V (3)
- 68nC @ 10V (3)
- 70nC @ 10V (3)
- 71nC @ 10V (8)
- 81nC @ 10V (1)
- 91nC @ 10V (3)
- 输入电容（Ciss）（最大）@Vds :
-
- 1243pF @ 100V (3)
- 1257pF @ 100V (3)
- 1262pF @ 25V (2)
- 1300pF @ 300V (12)
- 1345pF @ 100V (2)
- 1350pF @ 300V (6)
- 1434pF @ 100V (2)
- 1960pF @ 25V (8)
- 1970pF @ 25V (1)
- 2880pF @ 25V (6)
- 2900pF @ 25V (3)
- 3500pF @ 50V (3)
- 3501pF @ 30V (6)
- 3640pF @ 40V (3)
- 545pF @ 100V (2)
- 5600pF @ 10V (3)
- 620pF @ 100V (2)
- 630pF @ 100V (5)
- 735pF @ 25V (1)
- 7735pF @ 25V (3)
- 8000pF @ 10V (1)
- 880pF @ 25V (1)
- 驱动电压（最大Rds接通，最小Rds接通） :
84 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,583
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
911
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,486
有现货
|
STMicroelectronics | MOSFET N-CH 650V 18A D2PAK | MDmesh™ V | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | 10V | ±25V | ||
|
|
获得报价 |
1,371
有现货
|
Sanken | MOSFET N-CH 60V TO-3P | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 130W (Tc) | N-Channel | - | 60V | 70A (Ta) | 6 mOhm @ 35A, 10V | 4V @ 1mA | - | 8000pF @ 10V | 10V | ±20V | ||
|
|
获得报价 |
1,625
有现货
|
Infineon Technologies | MOSFET N-CH 55V 86A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 130W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
3,748
有现货
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 130W (Tc) | N-Channel | - | 55V | 75A (Tc) | 8 mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | 2880pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
获得报价 |
2,397
有现货
|
ON Semiconductor | MOSFET N-CH 500V TO-220AB-3 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4A, 10V | 5V @ 250µA | 18nC @ 10V | 735pF @ 25V | 10V | ±25V | ||
|
|
获得报价 |
3,267
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
1,291
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
|
获得报价 |
2,459
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A D2PAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
1,850
有现货
|
STMicroelectronics | MOSFET N-CH 650V 18A I2PAK | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | 10V | ±25V | ||
|
|
|
获得报价 |
2,787
有现货
|
STMicroelectronics | MOSFET N-CH 800V 12A D2PAK | MDmesh™ K5 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 130W (Tc) | N-Channel | - | 800V | 12A (Tc) | 445 mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
1,069
有现货
|
STMicroelectronics | MOSFET N-CHANNEL 800V 12A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 800V | 12A (Tc) | 445 mOhm @ 6A, 10V | 5V @ 100µA | 22nC @ 10V | 620pF @ 100V | 10V | ±30V | ||
|
|
获得报价 |
2,622
有现货
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
获得报价 |
1,794
有现货
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
获得报价 |
1,435
有现货
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 130W (Tc) | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | ||
|
|
|
获得报价 |
800
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 650V 13.7A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 650V | 13.7A (Ta) | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | 1300pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,355
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-3P(N) | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
2,287
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,889
有现货
|
Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 11A (Tc) | 382 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1243pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
3,882
有现货
|
Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 11A (Tc) | 382 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1243pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
3,008
有现货
|
Vishay Siliconix | MOSFET N-CHAN 600V 24A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 11A (Tc) | 382 mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | 1243pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,541
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
1,942
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
2,950
有现货
|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
|
|
|
获得报价 |
2,694
有现货
|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | Super Junction | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
|
|
获得报价 |
3,413
有现货
|
Nexperia USA Inc. | MOSFET N-CH 80V 82A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 130W (Tc) | N-Channel | - | 80V | 82A (Tc) | 8.5 mOhm @ 15A, 10V | 4V @ 1mA | 55nC @ 10V | 3640pF @ 40V | 10V | ±20V | ||
|
|
|
获得报价 |
3,475
有现货
|
Nexperia USA Inc. | MOSFET N-CH 80V 82A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 130W (Tc) | N-Channel | - | 80V | 82A (Tc) | 8.5 mOhm @ 15A, 10V | 4V @ 1mA | 55nC @ 10V | 3640pF @ 40V | 10V | ±20V | ||
|
|
|
获得报价 |
3,210
有现货
|
Nexperia USA Inc. | MOSFET N-CH 80V 82A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 130W (Tc) | N-Channel | - | 80V | 82A (Tc) | 8.5 mOhm @ 15A, 10V | 4V @ 1mA | 55nC @ 10V | 3640pF @ 40V | 10V | ±20V | ||
|
|
|
获得报价 |
1,268
有现货
|
STMicroelectronics | MOSFET N-CH 40V 120A POWERFLAT | STripFET™ F6 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | PowerFlat™ (5x6) dual side | 130W (Tc) | N-Channel | - | 40V | 120A (Tc) | 3 mOhm @ 75A, 10V | 4V @ 1mA | 91nC @ 10V | 5600pF @ 10V | 6.5V, 10V | ±20V |
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