- 供应商设备包 :
- 25°C时的电流-连续漏极(Id) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 输入电容(Ciss)(最大)@Vds :
5 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
3,721
有现货
|
Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 125W (Tc) | N-Channel | - | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | ||
|
|
获得报价 |
2,299
有现货
|
Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 125W (Tc) | N-Channel | - | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | ||
|
|
获得报价 |
2,936
有现货
|
ON Semiconductor | MOSFET N-CH 600V 12A POWER88 | SuperFET® II | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 125W (Tc) | N-Channel | - | 600V | 12A (Ta) | 299 mOhm @ 6A, 10V | 3.5V @ 250µA | 51nC @ 10V | 1948pF @ 380V | 10V | ±20V | ||
|
|
获得报价 |
2,422
有现货
|
ON Semiconductor | MOSFET N-CH 600V 12A POWER88 | SuperFET® II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 125W (Tc) | N-Channel | - | 600V | 12A (Ta) | 299 mOhm @ 6A, 10V | 3.5V @ 250µA | 51nC @ 10V | 1948pF @ 380V | 10V | ±20V | ||
|
|
获得报价 |
671
有现货
|
ON Semiconductor | MOSFET N-CH 600V 12A POWER88 | SuperFET® II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | Power88 | 125W (Tc) | N-Channel | - | 600V | 12A (Ta) | 299 mOhm @ 6A, 10V | 3.5V @ 250µA | 51nC @ 10V | 1948pF @ 380V | 10V | ±20V |