- 包装材料 :
- 供应商设备包 :
- FET型 :
- 25°C时的电流-连续漏极(Id) :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,958
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | - | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
1,225
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | - | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
3,733
有现货
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | N-Channel | - | 55V | 75A (Tc) | 6.5 mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | 3450pF @ 25V | 10V | ±20V | ||
|
|
获得报价 |
3,747
有现货
|
STMicroelectronics | MOSFET N-CH 600V 22A I2PAK | MDmesh™ M2 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 170W (Tc) | N-Channel | - | 600V | 22A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 36nC @ 10V | 1440pF @ 100V | 10V | ±25V | ||
|
|
获得报价 |
3,568
有现货
|
Nexperia USA Inc. | MOSFET N-CH 100V I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | - | 100V | 68A (Tc) | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | 10V | ±20V | ||
|
|
获得报价 |
2,082
有现货
|
Vishay Siliconix | MOSFET N-CH 600V 9.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 170W (Tc) | N-Channel | - | 600V | 9.2A (Tc) | 750 mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | 1400pF @ 25V | 10V | ±30V | ||
|
|
获得报价 |
2,839
有现货
|
Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 170W (Tc) | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V |