- FET型 :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
-
- 10.3 mOhm @ 17.5A, 10V (1)
- 14 mOhm @ 10A, 10V (1)
- 2.4 mOhm @ 90A, 10V (3)
- 22.2 mOhm @ 10A, 10V (1)
- 28 mOhm @ 5A, 10V (1)
- 3.1 mOhm @ 40A, 10V (1)
- 3.9 mOhm @ 56A, 10V (3)
- 4.5 mOhm @ 32.5A, 10V (1)
- 44 mOhm @ 5A, 10V (1)
- 5.1 mOhm @ 55A, 10V (3)
- 5.2 mOhm @ 40A, 10V (1)
- 6.3 mOhm @ 30A, 10V (1)
- 9.1 mOhm @ 20A, 10V (1)
- Vgs（th）（最大）@Id :
- Vgs（最大值） :
19 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗（最大） | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | 驱动电压（最大Rds接通，最小Rds接通） | Vgs（最大值） | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
1,966
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 80A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 40V | 80A (Ta) | 5.2 mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | 7770pF @ 10V | 6V, 10V | +10V, -20V | ||
|
|
|
获得报价 |
1,300
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 35A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 58W (Tc) | N-Channel | - | 40V | 35A (Ta) | 10.3 mOhm @ 17.5A, 10V | 3V @ 1mA | 28nC @ 10V | 1370pF @ 10V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,659
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 80A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | N-Channel | - | 40V | 80A (Ta) | 3.1 mOhm @ 40A, 10V | 3V @ 1mA | 87nC @ 10V | 4340pF @ 10V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
1,282
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 60A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 90W (Tc) | P-Channel | - | 40V | 60A (Ta) | 6.3 mOhm @ 30A, 10V | 3V @ 1mA | 125nC @ 10V | 6510pF @ 10V | 6V, 10V | +10V, -20V | ||
|
|
|
获得报价 |
2,217
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 38W (Tc) | N-Channel | - | 40V | 20A (Ta) | 14 mOhm @ 10A, 10V | 3V @ 1mA | 18nC @ 10V | 820pF @ 10V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
1,804
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 20A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 41W (Tc) | P-Channel | - | 40V | 20A (Ta) | 22.2 mOhm @ 10A, 10V | 3V @ 1mA | 37nC @ 10V | 1850pF @ 10V | 6V, 10V | +10V, -20V | ||
|
|
|
获得报价 |
3,305
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 10A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 27W (Tc) | P-Channel | - | 40V | 10A (Ta) | 44 mOhm @ 5A, 10V | 3V @ 1mA | 19nC @ 10V | 930pF @ 10V | 6V, 10V | +10V, -20V | ||
|
|
|
获得报价 |
603
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 10A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 25W (Tc) | N-Channel | - | 40V | 10A (Ta) | 28 mOhm @ 5A, 10V | 3V @ 1mA | 10nC @ 10V | 410pF @ 10V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
1,903
有现货
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 40A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 68W (Tc) | P-Channel | - | 40V | 40A (Ta) | 9.1 mOhm @ 20A, 10V | 3V @ 1mA | 83nC @ 10V | 4140pF @ 10V | 6V, 10V | +10V, -20V | ||
|
|
获得报价 |
1,931
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,526
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,782
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 83W (Tc) | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,771
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
1,887
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,614
有现货
|
Infineon Technologies | MOSFET N CH 40V 90A DPAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 140W (Tc) | N-Channel | - | 40V | 90A (Tc) | 2.4 mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,283
有现货
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 65A DPAK-3 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 88W (Tc) | N-Channel | - | 40V | 65A (Ta) | 4.5 mOhm @ 32.5A, 10V | 3V @ 1mA | 63nC @ 10V | 2800pF @ 10V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,124
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
3,927
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V | ||
|
|
|
获得报价 |
2,929
有现货
|
Infineon Technologies | MOSFET N-CH 40V 56A DPAK | HEXFET®, StrongIRFET™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98W (Tc) | N-Channel | - | 40V | 56A (Tc) | 3.9 mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | 3150pF @ 25V | 6V, 10V | ±20V |
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