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功耗(最大) :
25°C时的电流-连续漏极(Id) :
Rds开启(最大)@Id,Vgs :
Vgs(th)(最大)@Id :
栅极电荷(Qg)(最大)@Vgs :
输入电容(Ciss)(最大)@Vds :
驱动电压(最大Rds接通,最小Rds接通) :
2033 产品
图片 型号 价格 数量 库存 制造商 描述 系列 零件状态 包装材料 技术 工作温度 安装类型 包装/箱 供应商设备包 功耗(最大) FET型 FET特性 漏极-源极电压(Vdss) 25°C时的电流-连续漏极(Id) Rds开启(最大)@Id,Vgs Vgs(th)(最大)@Id 栅极电荷(Qg)(最大)@Vgs 输入电容(Ciss)(最大)@Vds 驱动电压(最大Rds接通,最小Rds接通) Vgs(最大值)
SIHP30N60E-GE3
获得报价
RFQ
1,497
有现货
Vishay Siliconix MOSFET N-CH 600V 29A TO220AB E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 600V 29A (Tc) 125 mOhm @ 15A, 10V 4V @ 250µA 130nC @ 10V 2600pF @ 100V 10V ±30V
TK4A65DA(STA4,Q,M)
获得报价
RFQ
3,460
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 650V 3.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 650V 3.5A (Ta) 1.9 Ohm @ 1.8A, 10V 4.4V @ 1mA 12nC @ 10V 600pF @ 25V 10V ±30V
TK4A60DB(STA4,Q,M)
获得报价
RFQ
2,924
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 600V 3.7A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 600V 3.7A (Ta) 2 Ohm @ 1.9A, 10V 4.4V @ 1mA 11nC @ 10V 540pF @ 25V 10V ±30V
TK4A55D(STA4,Q,M)
获得报价
RFQ
2,941
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 550V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 550V 4A (Ta) 1.88 Ohm @ 2A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
TK4A55DA(STA4,Q,M)
获得报价
RFQ
1,573
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 550V 3.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 550V 3.5A (Ta) 2.45 Ohm @ 1.8A, 10V 4.4V @ 1mA 9nC @ 10V 380pF @ 25V 10V ±30V
TK4A53D(STA4,Q,M)
获得报价
RFQ
2,894
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 525V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 525V 4A (Ta) 1.7 Ohm @ 2A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
TK4A50D(STA4,Q,M)
获得报价
RFQ
2,452
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 500V 4A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 500V 4A (Ta) 2 Ohm @ 2A, 10V 4.4V @ 1mA 9nC @ 10V 380pF @ 25V 10V ±30V
TK15A60U(STA4,Q,M)
获得报价
RFQ
1,058
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
RJK4018DPK-00#T0
获得报价
RFQ
2,893
有现货
Renesas Electronics America MOSFET N-CH 400V 43A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel - 400V 43A (Ta) 100 mOhm @ 21.5A, 10V - 99nC @ 10V 4100pF @ 25V 10V ±30V
RJK4007DPP-M0#T2
获得报价
RFQ
2,119
有现货
Renesas Electronics America MOSFET N-CH 400V 7.6A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 32W (Tc) N-Channel - 400V 7.6A (Ta) 550 mOhm @ 7A, 10V - 24.5nC @ 10V 850pF @ 25V 10V ±30V
RJK4006DPP-M0#T2
获得报价
RFQ
3,880
有现货
Renesas Electronics America MOSFET N-CH 400V 8A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 29W (Tc) N-Channel - 400V 8A (Ta) 800 mOhm @ 4A, 10V - 20nC @ 10V 620pF @ 25V 10V ±30V
RJK4002DPP-M0#T2
获得报价
RFQ
1,767
有现货
Renesas Electronics America MOSFET N-CH 400V 3A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FL 20W (Tc) N-Channel - 400V 3A (Ta) 2.9 Ohm @ 1.5A, 10V - 6nC @ 100V 165pF @ 25V 10V ±30V
RJK2511DPK-00#T0
获得报价
RFQ
930
有现货
Renesas Electronics America MOSFET N-CH 250V 65A TO3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 200W (Tc) N-Channel - 250V 65A (Ta) 34 mOhm @ 32.5A, 10V - 120nC @ 10V 4900pF @ 25V 10V ±30V
RJK2009DPM-00#T0
获得报价
RFQ
2,190
有现货
Renesas Electronics America MOSFET N-CH 200V 40A TO3PFM - Active Tube MOSFET (Metal Oxide) - Through Hole TO-3PFM, SC-93-3 TO-3PFM 60W (Tc) N-Channel - 200V 40A (Ta) 36 mOhm @ 20A, 10V - 72nC @ 10V 2900pF @ 25V 10V ±30V
Default Photo
获得报价
RFQ
2,504
有现货
Renesas Electronics America MOSFET N-CH 600V 0.2A TO-92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Short Body TO-92-3 750mW (Ta) N-Channel - 600V 200mA (Ta) 16.5 Ohm @ 100mA, 10V - 4.8nC @ 10V 66pF @ 25V 10V ±30V
2SK1859-E
获得报价
RFQ
3,422
有现货
Renesas Electronics America MOSFET N-CH 900V 6A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 60W (Tc) N-Channel - 900V 6A (Ta) 3 Ohm @ 3A, 10V - - 980pF @ 10V 10V ±30V
2SK1775-E
获得报价
RFQ
1,144
有现货
Renesas Electronics America MOSFET N-CH 900V 8A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 60W (Tc) N-Channel - 900V 8A (Ta) 1.6 Ohm @ 4A, 10V - - 1730pF @ 10V 10V ±30V
2SK1342-E
获得报价
RFQ
1,120
有现货
Renesas Electronics America MOSFET N-CH 900V 6A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel - 900V 8A (Ta) 1.6 Ohm @ 4A, 10V - - 1730pF @ 10V 10V ±30V
2SK1341-E
获得报价
RFQ
2,394
有现货
Renesas Electronics America MOSFET N-CH 900V 6A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel - 900V 6A (Ta) 3 Ohm @ 3A, 10V - - 980pF @ 10V 10V ±30V
2SK1340-E
获得报价
RFQ
3,197
有现货
Renesas Electronics America MOSFET N-CH 900V 5A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 100W (Tc) N-Channel - 900V 5A (Ta) 4 Ohm @ 3A, 10V - - 740pF @ 10V 10V ±30V
2SK1339-E
获得报价
RFQ
3,616
有现货
Renesas Electronics America MOSFET N-CH 900V 3A TO-3P - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 80W (Tc) N-Channel - 900V 3A (Ta) 7 Ohm @ 1.5A, 10V - - 425pF @ 10V 10V ±30V
TK12Q60W,S1VQ
获得报价
RFQ
3,156
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 100W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK16A60W5,S4VX
获得报价
RFQ
3,860
有现货
Toshiba Semiconductor and Storage MOSFET N CH 600V 15.8A TO-220SIS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel Super Junction 600V 15.8A (Ta) 190 mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43nC @ 10V 1350pF @ 300V 10V ±30V
SIHF8N50L-E3
获得报价
RFQ
2,920
有现货
Vishay Siliconix MOSFET N-CH 500V 8A TO220FP - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 40W (Tc) N-Channel - 500V 8A (Tc) 1 Ohm @ 4A, 10V 5V @ 250µA - 873pF @ 25V 10V ±30V
APT84F50L
获得报价
RFQ
600
有现货
Microsemi Corporation MOSFET N-CH 500V 84A TO-264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 1135W (Tc) N-Channel - 500V 84A (Tc) 65 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 13500pF @ 25V 10V ±30V
APT84F50B2
获得报价
RFQ
3,386
有现货
Microsemi Corporation MOSFET N-CH 500V 84A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel - 500V 84A (Tc) 65 mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 13500pF @ 25V 10V ±30V
APT56F60B2
获得报价
RFQ
2,176
有现货
Microsemi Corporation MOSFET N-CH 600V 60A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 600V 60A (Tc) 110 mOhm @ 28A, 10V 5V @ 2.5mA 280nC @ 10V 11300pF @ 25V 10V ±30V
APT43F60B2
获得报价
RFQ
1,085
有现货
Microsemi Corporation MOSFET N-CH 600V 45A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 780W (Tc) N-Channel - 600V 45A (Tc) 150 mOhm @ 21A, 10V 5V @ 2.5mA 215nC @ 10V 8590pF @ 25V 10V ±30V
TK4A60DA(STA4,Q,M)
获得报价
RFQ
1,887
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 600V 3.5A TO220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS - N-Channel - 600V 3.5A (Ta) 2.2 Ohm @ 1.8A, 10V 4.4V @ 1mA 11nC @ 10V 490pF @ 25V 10V ±30V
2SK3566(STA4,Q,M)
获得报价
RFQ
3,977
有现货
Toshiba Semiconductor and Storage MOSFET N-CH 900V 2.5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 2.5A (Ta) 6.4 Ohm @ 1.5A, 10V 4V @ 1mA 12nC @ 10V 470pF @ 25V 10V ±30V
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