- 零件状态 :
- 驱动电压(最大Rds接通,最小Rds接通) :
7 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 技术 | 工作温度 | 安装类型 | 包装/箱 | 供应商设备包 | 功耗(最大) | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | 驱动电压(最大Rds接通,最小Rds接通) | Vgs(最大值) | |
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获得报价 |
2,512
有现货
|
Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | ||
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|
获得报价 |
2,955
有现货
|
Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
733
有现货
|
Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
2,550
有现货
|
Infineon Technologies | MOSFET P-CH 250V 0.26A SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 4.5V, 10V | ±20V | ||
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|
获得报价 |
2,790
有现货
|
Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | ||
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|
获得报价 |
2,969
有现货
|
Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V | ||
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|
获得报价 |
1,358
有现货
|
Infineon Technologies | MOSFET P-CH 250V 260MA 4SOT223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | P-Channel | - | 250V | 260mA (Ta) | 12 Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | 2.8V, 10V | ±20V |